Abstract
A procedure for analyzing high-purity arsenic by atomic emission spectrometry (AES) was proposed that provides the preconcentration of silicon and other nonvolatile impurities in a crater of a graphite electrode using matrix distillation from 2-g sample portions as As2O3 . The procedure is characterized by a low correction for the blank experiment. The detection limit for silicon was 4 × 10–7 wt %.
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Pimenov, V.G., Lukin, D.V., Bondarenko, A.V. et al. Determination of Silicon Impurities in High-Purity Arsenic Using Atomic Emission Spectrometry with Matrix Distillation from a Tipped Electrode. Journal of Analytical Chemistry 57, 138–141 (2002). https://doi.org/10.1023/A:1014099420246
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DOI: https://doi.org/10.1023/A:1014099420246