Abstract
The spectral characteristic of infrared silicon–platinum silicide Schottky barrier photodetectors is shifted to the long wavelength region due to a highly-doped surface silicon layer produced by recoil boron implantation. The dependence of the resulting highly-doped layer parameters on high-energy boron-ion implantation regimes is studied experimentally. Energy-band diagrams and reduction of the barrier height are calculated for p-Si–PtSi structures with highly-doped surface layers produced by molecular-beam epitaxy and recoil implantation.
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REFERENCES
M. Kiamata and N. Tubouchi, in: SPIE. Optical Engineering Press, Bellingam, Washington, USA, 293-349(1995).
R. Breaiter, W. Cabanski, R. Koch, et al., in: Proc. SPIE, 3436, 359-374 (1998).
V. G. Ivanov, V. I. Panasenkov, G. V. Ivanov, in: Proc. SPIE, 3819, 143-148 (1999).
P. J. Sauer, F. V. Shallcross, F. L. Hsueh, et al., in: Proc. SPIE, 1540, 285-296 (1987).
L. R. Hudson, H. F. Tseng, and W. L. Wang, in: Proc. SPIE, 819, 262-269 (1987).
V. G. Ivanov, V. I. Panasenkov, and G. V. Ivanov, Fiz. Tekh. Poluprovodn., 31,No. 6, 735-739 (1997).
S. Kumar, J. T. Boyd, and H. E. Jackson, J. Appl. Phys., 62(9), 3848-3852 (1987).
P. Lahnor, R. Schmiedl, P. Woerle, et al., in: Proc. SPIE, 819, 262-269 (1996).
A. Czernik, H. Palm, W. Cabanski, et al., J. Appl. Phys. A55, 189-191 (1992).
J. M. Shannon, Appl. Phys. Lett., 25,No. 1, 75-77 (1974).
J. M. Shannon, Appl. Phys. Lett., 24,No. 8, 369-371 (1974).
T. L. Lin, J. S. Park, T. George, et al., Appl. Phys. Lett., 62(25), 3318-3320 (1993).
T. L. Lin, J. S. Park, S. D. Gunapala, et al., J. Appl. Phys., 33, 2435-2438 (1994).
R. I. Epichsen, J. R. Bautval, and J. P. de Souza, Nucl. Instrum. Meth. Phys. Res., B7/8, 316-320 (1985).
G. E. Remnev, I. F. Isakov, M. S. Opekunov, V. M. Matvienko, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 92-111 (1998).
M. V. Detinko, Yu. V. Lisyuk, Yu. V. Medvedev, and A. A. Skryl'nikov, Russ. Phys. J., No. 9, 45-64 (1992).
A. V. Voitsekhovskii, A. P. Kokhanenko, A. G. Korotaev, and S. N. Nesmelov, in: Abstacts of Reports at the Int. Conf. Solid State Crystals. Materials Science and Applications, Zakopane, Poland (2000) p. 160.
A. V. Voitsekhovskii, A. P. Kokhanenko, A. G. Korotaev, and S. N. Nesmelov, in: Proc. I Int. Congress on Radiation Physics, High-Current Electronics, Modification of Materials, Tomsk, Vol. 3 (2000) p. 362.
A. V. Voitsekhovskii, A. P. Kokhanenko, A. G. Korotaev, in: Proc. SPIE, 3881, 274-283 (1999).
A. P. Kokhanenko, A. G. Korotaev, and A. V. Voitsekhovskii, in: Abstracts of Reports at the Int. Conf. Solid State Crystals, Zakopane, Poland (1998) p. 71.
A. V. Voitsekhovskii, A. G. Korotaev A. P. Kokhanenko, et al., Abstracts of Reports at the IV All-Russia Workshop on Physical-Chemical Fundamentals of Ion Implantation [in Russian], Nizhny Novgorod, (1998) p. 18.
V. I. Strikha, Theoretical Principles of Operation of Metal-Semiconductor Contacts [in Russian], Naukova Dumka, Kiev (1974).
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Voitsekhovskii, A.V., Kokhanenko, A.P., Nesmelov, S.N. et al. Silicon–Platinum Silicide Schottky Barriers with a Highly-Doped Surface Layer. Russian Physics Journal 44, 794–805 (2001). https://doi.org/10.1023/A:1013691432540
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DOI: https://doi.org/10.1023/A:1013691432540