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Fabrication of GaAs hole array as a 2D-photonic crystal and their application to photonic bandgap waveguide

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Abstract

A two dimensional (2D) GaAs hole array with a high aspect ratio was successfully fabricated by dry etching techniques using a highly ordered alumina membrane as a mask. The reflection spectra of the GaAs hole array shows characteristics of the photonic bandgap (PBG) calculated by using the 2D triangular lattice structure. Various defect lines were formed etching in the GaAs hole array using focused ion beam. The defect-type PBG waveguide was experimentally demonstrated.

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Authors and Affiliations

  1. NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, 243-0198, Atsugi, Kanagawa, Japan

    Masashi Nakao, Satoshi Oku, Hidenao Tanaka, Yasuo Shibata, Atsushi Yokoo & Toshiaki Tamamura

  2. Tokyo Metropolitan University, 1-1 Minamiosawa, 192-0397, Hachiouji, Tokyo, Japan

    Hideki Masuda

Authors
  1. Masashi Nakao
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  2. Satoshi Oku
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  3. Hidenao Tanaka
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  4. Yasuo Shibata
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  5. Atsushi Yokoo
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  6. Toshiaki Tamamura
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  7. Hideki Masuda
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Nakao, M., Oku, S., Tanaka, H. et al. Fabrication of GaAs hole array as a 2D-photonic crystal and their application to photonic bandgap waveguide. Optical and Quantum Electronics 34, 183–193 (2002). https://doi.org/10.1023/A:1013329631972

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  • DOI: https://doi.org/10.1023/A:1013329631972

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