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High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide

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Abstract

In order to further suppress the F–P lasing and increase the superluminescent power, the tilted ridge waveguide was introduced to the integrated superluminescent device [monolithic integration of the superluminescent diode (SLD) with semiconductor optical amplifier (SOA)[. By this means, high power 1.5 μm integrated superluminescent light source has been fabricated without anti-reflection (AR) coating. The F–P oscillations between the two cleaved facets were suppressed successfully compared with the device without ridge waveguide. More than 200 mW peak pulsed power was obtained under quasi-CW condition (0.1 ms pulse width, 10% duty cycle) by co-operation of the two integrated sections. The spectral FWHM is 25 nm.

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Authors and Affiliations

  1. Electronics Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130023, China

    Yang Liu, Junfeng Song, Yuping Zeng, Bin Wu, Yuantao Zhang & Guotong Du

  2. Institute of Posts and Telecommunication, Jilin University, Changchun, 130020, China

    Ying Qian & Yingzhi Sun

Authors
  1. Yang Liu
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  2. Junfeng Song
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  3. Yuping Zeng
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  4. Bin Wu
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  5. Yuantao Zhang
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  6. Ying Qian
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  7. Yingzhi Sun
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  8. Guotong Du
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Corresponding author

Correspondence to Yang Liu.

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Liu, Y., Song, J., Zeng, Y. et al. High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide. Optical and Quantum Electronics 33, 1233–1239 (2001). https://doi.org/10.1023/A:1013318426338

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  • DOI: https://doi.org/10.1023/A:1013318426338

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