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Synthesis and properties of CeN thin films deposited by arc ion plating

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Abstract

Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce arc discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the arc discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm−3. This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 × 10−4 Ωcm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+.

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Authors and Affiliations

  1. Department of Materials Processing Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-8603, Japan

    S. Q. Xiao, K. Tsuzuki, H. Sugimura & O. Takai

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  1. S. Q. Xiao
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  2. K. Tsuzuki
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  3. H. Sugimura
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  4. O. Takai
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Xiao, S.Q., Tsuzuki, K., Sugimura, H. et al. Synthesis and properties of CeN thin films deposited by arc ion plating. Journal of Materials Science 33, 3251–3254 (1998). https://doi.org/10.1023/A:1013264709122

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