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Mechanism of Formation of Stacking Fault Dislocations in the Crystal Lattice of Electrodeposited Films Based on Cobalt Alloys

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Abstract

Results of studying the mechanism of formation of stacking fault dislocations in the crystal lattice of electrodeposited films based on cobalt alloys are presented.

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Authors and Affiliations

  1. Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072, Belarus

    T. A. Tochitskii & A. E. Dmitrieva

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  1. T. A. Tochitskii
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  2. A. E. Dmitrieva
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Tochitskii, T.A., Dmitrieva, A.E. Mechanism of Formation of Stacking Fault Dislocations in the Crystal Lattice of Electrodeposited Films Based on Cobalt Alloys. Russian Journal of Electrochemistry 37, 1316–1319 (2001). https://doi.org/10.1023/A:1013200132481

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