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Investigation of thermoelectric power in indium sesquitelluride(In2Te3) thin films

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Abstract

Polycrystalline and stoichiometric thin films of indium sesquitelluride (In2Te3) belonging to the α-phase were prepared on glass substrates by flash evaporation technique at a constant temperature of 473 K. The thermoelectric power of these p-type α-In2Te3 thin films was determined as a function of temperature of the hot end of the films and also of film thickness. It was found that the thermoelectric power is nearly independent of temperature and a possible reason for this behavior has been given. The dependence of the thermoelectric power on the reciprocal thickness of the films has also been discussed on the basis of the size effect theories.

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Authors and Affiliations

  1. Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-, 388120, Gujarat, India

    D. Lakshminarayana & P. B. Patel

  2. Department of Chemistry, Sardar Patel University, Vallabh Vidyanagar-, 388120, Gujarat, India

    R. R. Desai

  3. Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara-, 390001, Gujarat, India

    C. J. Panchal

Authors
  1. D. Lakshminarayana
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  2. P. B. Patel
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  3. R. R. Desai
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  4. C. J. Panchal
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Lakshminarayana, D., Patel, P.B., Desai, R.R. et al. Investigation of thermoelectric power in indium sesquitelluride(In2Te3) thin films. Journal of Materials Science: Materials in Electronics 13, 27–30 (2002). https://doi.org/10.1023/A:1013142929482

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  • DOI: https://doi.org/10.1023/A:1013142929482

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