Abstract
Highly conductive and transparent indium-doped zinc oxide, ZnO, thin films were deposited on sodocalcic glass substrates by chemical spray, using zinc acetylacetonate, Zn(C5H7O2)2, and doped with indium chloride. Substrate temperature, dopant concentration in the starting solution and the kind of alcohol used as a solvent (methanol, ethanol and isopropanol) were varied in order to optimize deposition conditions. The lowest resistivity value of \( 2.8x10^{ - 3} \Omega - cm \) was obtained with ethanol at a substrate temperature of 475 °C and a [In]/[Zn]=2.5 at % ratio in the starting solution. The mobility and the carrier concentration values were in the order of \( 6cm^2 /\left( {V - s} \right) \) and \( 10^{20} cm^{ - 3} \), respectively. For optimal deposition conditions no preferential growth was found. Surface morphology was altered depending on the kind of alcohol used, producing a rough surface with isopropanol than with methanol or ethanol. Transmittance average was of the order of 85%, at 550 nm.
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Maldonado, A., Olvera, M.d.L., Asomoza, R. et al. Highly conductive and transparent In-doped zinc oxide thin films deposited by chemical spray using Zn(C5H7O2)2 . Journal of Materials Science: Materials in Electronics 12, 623–627 (2001). https://doi.org/10.1023/A:1013107332029
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DOI: https://doi.org/10.1023/A:1013107332029