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Effect of carbon on lattice strain and hole mobility in Si1-x Ge x alloys

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Abstract

Pseudomorphic Si1-x Ge x and partially strain compensated \({\text{Si}}_{1 - x - y} {\text{Ge}}_x {\text{C}}_y \) layers with different Ge and C fractions have been grown at 500 °C by ultra high vacuum chemical vapor deposition on Si (100) substrates. The degree of strain compensation of the layers has been investigated by high resolution X-ray diffraction and simple application of the linear elasticity theory. The surface morphology of the layers has been characterized by atomic force microscopy. The dependence of Si–Si Raman mode vibrations on strain and composition of binary and ternary alloys have been explained with experimental and theoretically calculated results. The Hall hole mobility is found to increase with decreasing compressive strain or effective Ge content in the layer throughout the temperature range of 120–300 K.

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References

  1. R. Hull and J. C. Bean, in “Germanium Silicon: Physics and Materials” (Academic Press, 1999).

  2. S. S. Iyer, G. L. Patton, J. M. C. Stork, B. S. Meyerson and D. L. Harame, IEEE Trans. Electron Devices 36 (1989) 2043.

    Google Scholar 

  3. T. Schaffler, Semicond. Sci. and Technol. 12 (1997) 1515.

    Google Scholar 

  4. S. C. Jain. H. J. Osten, B. Dietrich and H. Rucker ibid. 10 (1995) 1289.

    Google Scholar 

  5. K. Eberl, S. S. Iyer, S. Zollner, J. C. Tsang and F. K. Legoues, Appl. Phys. Lett. 60 (1992) 3033.

    Google Scholar 

  6. C. W. Liu, A. St. Amour, J. C. Sturm, Y. R. J. Lacroix, M. L. W. Thewalt, C. W. Magee and D. Eaglesham, J. Appl. Phys. 80 (1996) 3043.

    Google Scholar 

  7. C. L. Chang, L. P. Rokhinson and J. C. Sturm, Apply. Phys. Lett. 73 (1998) 3568.

    Google Scholar 

  8. H. J. Osten, E. Bugiel and P. Zaumseil ibid. 64 (1994) 3440.

    Google Scholar 

  9. J. W. Strane, H. J. Stein, S. R. Lee, B. L. Doyle, S. T. Picraux and J. W. Mayer, ibid. 63 (1993) 2786.

    Google Scholar 

  10. C. W. Liu, Y. D. Tseng and Y. S. Huang ibid. 75 (1999) 2271.

    Google Scholar 

  11. A. C. Mocuta and D. W. Greve J. Vac. Sci. Technol. A 17 (1999) 1239.

    Google Scholar 

  12. S. John, E. J. Quinones, B. Ferguson, S. K. Ray, B. Anantharam, S. Middlebrooks, C. B. Mullins, J. Ekerdt, J. Rawlings and S. K. Banerjee, J. Electrochemical Soc. 146 (1999) 4611.

    Google Scholar 

  13. J. Mi, P. Warren, M. Gailhanou, Jean-Daniel GaniÈre and M. Dutoit, J. Vac. Sci. Technol. B 14 (1996) 1660.

    Google Scholar 

  14. P. C. Kelires, Phys. Rev. Lett. 75 (1995) 1114.

    Google Scholar 

  15. M. Berti, D. De Salvador, A. V. Drigo and F. Romanto, Appl. Phys. Lett. 72 (1998) 1602.

    Google Scholar 

  16. L. V. Kulik, C. Guedj, M. W. Dashiell, J. Kolodzey and A. Hairie, Phys. Rev. B 59 (1999) 15753.

    Google Scholar 

  17. B. Dietrich, H. J. Osten, H. Rucker, M. Methfessel and P. Zaumseil, ibid. 49 (1994) 17185.

    Google Scholar 

  18. M. Fatemi and R. E. Stahlbush, Appl. Phys. Lett. 58 (1991) 825.

    Google Scholar 

  19. K. Rim, S. Takagi, J. J. Welser, J. L. Hoyt and F. Gibbons, Mater. Res. Soc. Symp. Proc. 379 (1995) 327.

    Google Scholar 

  20. C. L. Chang, A. St. Amour and J. C. Sturm, IEEE IEDM Tech. Dig. (1996) 257.

  21. G. S. Kar, A. Dhar, S. K. Ray, S. John and S. K. Banerjee, J. Appl. Phys. 88 (2000) 2039.

    Google Scholar 

  22. D. Dentel, J. L. Bischoff, L. Kubler, J. Werckmann and M. Romeo, J. of Crystal Growth 191 (1998) 697.

    Google Scholar 

  23. G. S. Kar, S. K. Ray, Taehoon Kim, S. K. Banerjee and N. B. Chakrabarti, Solid State Electro. 45 (2001) 669.

    Google Scholar 

  24. M. I. Alonso and K. Winer, Phys. Rev. B 39 (1989) 10056.

    Google Scholar 

  25. D. J. Lockwood and J-M Baribeau, ibid. 45 (1992) 8565.

    Google Scholar 

  26. W. K. Choi, J. H. Chen, L. K. Bera, W. Feng, K. L. Pey, J. Mi, C. Y. Yang, A. Ramam, S. J. Chua, J. S. Pan, A. T. S. Wee and R. Liu, J. of Appl. Phys. 87 (2000) 192.

    Google Scholar 

  27. J. C. Tsang, P. M. Mooney, F. Dacol and J. O. Chu, ibid. 75 (1994) 8098.

    Google Scholar 

  28. H. Rucker, M. Methfessel, B. Dietrich, H. J. Osten and P. Zaumseil, Superlattice and Microstruct. 16 (1994) 121.

    Google Scholar 

  29. J. Menendez, P. Gopalan, G. S. Spencer, N. Cave and J. Strane, Appl. Phys. Lett. 66 (1995) 1160.

    Google Scholar 

  30. M. MelÈndez-Lira, J. MenÉdez, W. Windl, O. F. Sankey, G. S. Spencer, S. Sego, R. B. Culbertson, A. E. Bair and T. L. Alford, Phys. Rev. B 54 (1996) 12866.

    Google Scholar 

  31. H. J. Osten and P. Gaworzewski, J. Appl. Phys. 82 (1997) 4977.

    Google Scholar 

  32. Q. Lu, M. R. Jr. Sardela, T. R. Bramblett and J. E. Greene, ibid. 80 (1996) 4458.

    Google Scholar 

  33. P. Gaworzewski, K. Tittelbach-Helmrich, U. Penner and N. V. Abrosimov, ibid. 83 (1998) 5258.

    Google Scholar 

  34. J. M. Hinckley and J. Singh, Phys. Rev. B 41 (1990) 2912.

    Google Scholar 

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Authors and Affiliations

  1. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, 721 302, India

    G. S. Kar, A. Dhar, L. K. Bera & S. K. Ray

  2. Mixed Signal Processing Group, Texas Instruments, Dallas, USA

    S. John

  3. Microelectronics Research Center, The University of Texas, Austin, 78712, USA

    S. K. Banerjee

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  1. G. S. Kar
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  2. A. Dhar
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  3. L. K. Bera
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Kar, G.S., Dhar, A., Bera, L.K. et al. Effect of carbon on lattice strain and hole mobility in Si1-x Ge x alloys. Journal of Materials Science: Materials in Electronics 13, 49–55 (2002). https://doi.org/10.1023/A:1013103232208

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