Abstract
The possibility was examined of preparing a model of a two-layer photoresist based on a photo-sensitive layer of naphthoquinone diazide (FP-383), a planarizing layer of cyclorubber (FN-11), enhancing the photosensitivity and physicochemical resistance of FN-11 films after irradiation through thenaphthoquinone diazide layer and its removal by development in KOH.
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Gudymovich, E.N. Photosensitivity and Physicochemical Properties of the Two-Layer Photoresist Based on Naphthoquinone Diazide and Cyclorubber. Russian Journal of Applied Chemistry 74, 1044–1046 (2001). https://doi.org/10.1023/A:1013024313748
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DOI: https://doi.org/10.1023/A:1013024313748