Abstract
Recent experiments show the thermal growth of dislocation lines in ultra-pure bcc 3He. The activation energy for the growth of the dislocation lines is found to agree with the activation energy of mass diffusion. We propose that these dislocations are topological defects in the phase of the complex order-parameter, which describes the dynamic zero-point atomic correlations, unique to the bcc phase. There is also a shear field associated with these topological defects. We show that the smallest topological defect is a localized excitation, a loop-defect, which leads to the exponential growth of the dislocation lines with temperature.
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Gov, N. Quantum Nature of Dislocations in Pure bcc Helium. Journal of Low Temperature Physics 125, 143–151 (2001). https://doi.org/10.1023/A:1012965701603
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DOI: https://doi.org/10.1023/A:1012965701603