Abstract
We deposited amorphous carbon (a-C) films by magnetron sputtering of a graphite target in an argon plasma with constant bias voltage U bias on the substrate in the range from 0 to –250 V. We studied the microstructure of the films by transmission electron microscopy, electron diffraction, and Raman scattering. We also measured the electrical resistance of the a-C films as a function of U bias. The Raman spectra revealed a non-monotonic dependence of the ratio of the integrated intensities I D/I G on U bias. The transmission electron microscopy and electron diffraction study showed that the main structural element of a-C films deposited under ion bombardment are graphite-like clusters whose orientation relative to the substrate is determined by the intensity of the ion bombardment. We discuss mechanisms for the effect of U bias on formation of the structure and the properties of a-C films.
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Onoprienko, A.A. Microstructure and Properties of a-C Films Deposited under Ion Bombardment Conditions. Powder Metallurgy and Metal Ceramics 40, 292–296 (2001). https://doi.org/10.1023/A:1012813818136
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DOI: https://doi.org/10.1023/A:1012813818136