Abstract
Oxidation of I- and S2 - anions on the silica gel surface by atmospheric oxygen was studied at room temperature. The possibility and rate of oxidation processes are determined by the content of silica gel and oxygen in the systems. Tentative interpretation of the results is based on the assumption that a highly reactive singlet 1O2 species is formed in the oxygen ensemble on the silica surface.
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Pak, V.N., Hanson, C.D. & Coon, S.R. Oxidation of I- and S2- Anions by Oxygen in Aqueous Suspensions of Silica Gel. Russian Journal of Applied Chemistry 74, 58–62 (2001). https://doi.org/10.1023/A:1012735631066
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DOI: https://doi.org/10.1023/A:1012735631066