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Photoelectric Properties of Single-Crystal InSb Implanted with Mg Ions

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Inorganic Materials Aims and scope

Abstract

The nonuniform distributions of defects and impurities, as well as polishing damage, have a profound effect on the secondary-defect formation in InSb single crystals during ion implantation. The spectral dependences of photoconductance of ion-implanted InSb samples show that surface preparation and subsequent ion bombardment may result in the formation of electrically active defects at large depths below the irradiated surface. The annealing behavior of the irradiation damage is determined by the wafer-preparation procedure rather than by the irradiation and heat-treatment conditions.

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Authors and Affiliations

  1. Nizhni Novgorod Research Physicotechnical Institute, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603600, Russia

    V. S. Tulovchikov & E. S. Zharkov

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  1. V. S. Tulovchikov
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  2. E. S. Zharkov
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Tulovchikov, V.S., Zharkov, E.S. Photoelectric Properties of Single-Crystal InSb Implanted with Mg Ions. Inorganic Materials 37, 1118–1120 (2001). https://doi.org/10.1023/A:1012588824031

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