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Evaporation of High-Purity CdGa2S4

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Abstract

The saturation vapor pressure of CdGa2S4was measured as a function of temperature. The vapor composition was determined by mass spectrometry with thermal or pulsed laser evaporation of the sample. Gas formation during the CdGaS4synthesis depends on the purity of the starting elements (cadmium, sulfur, and gallium), the residual pressure in the ampule, and the synthetic procedure. At some stages of the synthesis, the vapor phase contains H2S, SO2 , CS2, and N2 . The composition of the vapor over a high-purity CdGa2S4single crystal is governed by the evaporation technique.

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Authors and Affiliations

  1. Department of the Elements and Structures of Optoinformatics, Institute of Problems of Logging of Information, National Academy of Sciences of Ukraine, Uzhgorod, Ukraine

    M. Yu. Rigan, G. N. Shpyrko & M. V. Kolozhvari

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  1. M. Yu. Rigan
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  2. G. N. Shpyrko
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  3. M. V. Kolozhvari
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Rigan, M.Y., Shpyrko, G.N. & Kolozhvari, M.V. Evaporation of High-Purity CdGa2S4. Inorganic Materials 37, 1101–1103 (2001). https://doi.org/10.1023/A:1012580622214

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