Abstract
The separate and combined effects of doping, annealing, and gamma irradiation on the temperature-dependent photocurrent through nominally undoped and doped sillenite-type crystals were investigated between 77 and 300 K. The results were interpreted using a band-structure model describing the recombination processes involved in terms of deep slow and fast recombination centers (r- and s-centers) and shallow traps. The electron transitions to recombination centers were shown to be controlled by the trap levelE t . The thermal stability of radiation-induced defects was assessed.
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Skorikov, V.M., Zakharov, I.S., Volkov, V.V. et al. Effects of Doping, Gamma Irradiation, and Annealing on the Temperature Dependence of the Photocurrent through Bismuth Titanate Crystals. Inorganic Materials 37, 1155–1160 (2001). https://doi.org/10.1023/A:1012549209919
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DOI: https://doi.org/10.1023/A:1012549209919