Abstract
A novel thermal plasma process, based on Thermal Plasma Chemical Vapor Deposition (TPCVD) for producing nanostructured ceramics from liquid precursors is described. The process combines the rapid thermal decomposition of low-cost liquid precursors injected into an Inductively Coupled Plasma (ICP) with a fast gas phase condensation due to the high cooling rate and short residence time existing in such a plasma. Examples of synthesis of Si-based nanostructured ceramic materials (SiC, Si3N4) as powders or coatings are given. Deposition rates of up to 10 μm/min can be achieved by the present technique.
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Bouyer, E., Müller, M., Henne, R. et al. Thermal Plasma Processing of Nanostructured Si-based Ceramic Materials. Journal of Nanoparticle Research 3, 371–376 (2001). https://doi.org/10.1023/A:1012546917064
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DOI: https://doi.org/10.1023/A:1012546917064