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Stabilization of Low-Temperature SnS by Rare-Earth Doping

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Inorganic Materials Aims and scope

Abstract

Rare-earth-doped SnS was studied by x-ray diffraction. (SnS)1 – x (LnS) x (Ln = Nd, Sm, Gd; x= 0.001, 0.002) crystals were found to have an orthorhombic structure in the temperature range 300–850 K.

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REFERENCES

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Authors and Affiliations

  1. Tusi State Pedagogical University, ul. U. Gadzhibekova 34, Baku, 370000, Azerbaijan

    V. I. Nasirov & Kh. A. Adgezalova

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  1. V. I. Nasirov
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  2. Kh. A. Adgezalova
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Nasirov, V.I., Adgezalova, K.A. Stabilization of Low-Temperature SnS by Rare-Earth Doping. Inorganic Materials 37, 1099–1100 (2001). https://doi.org/10.1023/A:1012528605376

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  • DOI: https://doi.org/10.1023/A:1012528605376

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