Abstract
The emission properties in the range 200-600 nm of the low-temperature plasma in mixtures of He with Et2Zn and H2Se vapors were studied. The spectrum of emission accompanying decomposition of Et2Zn includes 26 identified lines of Zn atoms and strong emission of electronically excited CH* radicals, and in the case of decomposition of H2Se two emission lines of Se atoms and an emission band of SeH* radicals are observed. The rate constants of quenching of the levels He 4d 3 D 2,1 and 3p 1 P 1 on introduction into the He plasma of Et2Zn and H2Se vapors were determined; Et2Zn is a stronger quenching agent than H2Se. Analytical lines allowing monitoring of ZnSe film deposition were selected. Direct plasmochemical decomposition of mixtures of Et2Zn with H2Se results in growth of textured ZnSe(cub) layers with substantial inclusions of the hexagonal phase and with carbon-containing inclusions. The photoluminescence spectra of the films obtained exhibit a strong edge band at 460 nm, overlapping with a strong self-activated band centered at 540 nm.
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Ob'edkov, A.M., Domrachev, G.A., Korovina, E.Y. et al. Emission Properties of the Plasma in Mixtures of Helium with Diethylzinc and Hydrogen Selenide Vapors. Russian Journal of General Chemistry 71, 865–872 (2001). https://doi.org/10.1023/A:1012367015233
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DOI: https://doi.org/10.1023/A:1012367015233