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Theory of Nondestructive Testing in the Electrical Degradation of Semiconductor Devices

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Abstract

The electric field strength has been determined at which electromagnetic field oscillations arise in metal–insulator–metal structures on account of defects. The radius of curvature at the crest of a microridge on a metal electrode can be determined by electrophysical methods. Formulas are derived for the mechanical and electrical fields around microscopic and macroscopic defects, as well as surface-tension energies.

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Authors
  1. V. M. Bogomol'nyi
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Bogomol'nyi, V.M. Theory of Nondestructive Testing in the Electrical Degradation of Semiconductor Devices. Measurement Techniques 44, 513–517 (2001). https://doi.org/10.1023/A:1012318521903

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