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Thermogravimetric Study of Volatile Precursors For Chemical Thin Film Deposition. Estimation of vapor pressures and source temperatures

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Abstract

Normal pressure thermogravimetry (TG) measurements were used to study the sublimation behavior of several volatile metal compounds, used as metal precursors in thin film fabrication by chemical vapor phase methods, like atomic layer deposition (ALD) and chemical vapor deposition (CVD). The results indicated that dynamic TG measurements may be used to find correct source temperatures to be used in an ALD reactor: a good correlation between the source temperatures used in ALD and temperatures corresponding to mass losses of 10 and 50% in TG was verified. It was also found that isothermal TG measurements offer a simple way for the vapor pressure measurements which otherwise are not trivial for solids with only moderate volatility.

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Authors and Affiliations

  1. Department of Chemistry, Laboratory of Inorganic Chemistry, University of Helsinki, P.O. Box 55, FIN-00014, Helsinki, Finland

    A. Niskanen, T. Hatanpää, M. Ritala & M. Leskelä

Authors
  1. A. Niskanen
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  2. T. Hatanpää
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  3. M. Ritala
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  4. M. Leskelä
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Niskanen, A., Hatanpää, T., Ritala, M. et al. Thermogravimetric Study of Volatile Precursors For Chemical Thin Film Deposition. Estimation of vapor pressures and source temperatures. Journal of Thermal Analysis and Calorimetry 64, 955–964 (2001). https://doi.org/10.1023/A:1011579114687

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  • DOI: https://doi.org/10.1023/A:1011579114687

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