Abstract
The kinetics of sintering of a powdered solid solution of carbon in silicon carbide sintered under a high pressure is considered. The role of diamond-like carbon clusters in the structure of silicon carbide in the process of structure formation is determined. It is shown that the parameters of the microstructure of sintered ceramics based on a SiC–C solid solution are correlated with its hardness.
Similar content being viewed by others
REFERENCES
N. F. Gadzyra, G. G. Gnesin, A. V. Andreev, V. G. Kravets, and A. A. Kas'yanenko, “Silicon carbide with superstoichiometric carbon,” Neorg. Mater., 32(7), 816-820 (1996).
M. Gadzira, G. Gnesin, O. Mykhaylyk, V. Britun, and O. Andreyev, “Solid solution of carbon in β-SiC,” Mater. Lett., 35, 277-282 (1998).
M. Gadzira, G. Gnesin, O. Mykhaylyk, and O. Andreyev, “Synthesis and structural peculiarities of nonstoichiometric β-SiC,” Diamond Related Mater., 7, 1466-1470 (1998).
O. O. Mykhaylyk and M. P. Gadzira, “Arrangement of C atoms in the SiC—C solid solution,” Acta Crystallogr., B55, 297-305 (1999).
N. F. Gadzyra, G. G. Gnesin, and A. A. Mikhailik, “High-pressure sintering of powder solid solution of carbon in silicon carbide,” Neorg. Mater., 35(10), 1237-1242 (1999).
L. G. Akselrud, Yu. N. Gryn, P. Y. Zavalii, et al., “CSD — Universal program package for single crystal and/or powder structure data treatment,” in: Solid State Crystallographic Meet (1989), p. 155.
P. A. Demkowicz, N. S. Bell, D. R. Gilbert, et al., “Diamondcoated silicon carbide whiskers,” Am. Ceram. Soc., 82(4), 1079-1081 (1999).
M. Gorman and S. A. Solin, “Direct evidence for homonuclear bonds in amorphous SiC,” Solid State Commun., 15, 761-765 (1974).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Gadzyra, N.F., Gnesin, G.G. & Mikhailik, A.A. Mechanism of Hardening of a Pressure-Sintered Material Based on a SiC–C Solid Solution. Refractories and Industrial Ceramics 42, 11–14 (2001). https://doi.org/10.1023/A:1011380615859
Issue Date:
DOI: https://doi.org/10.1023/A:1011380615859