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Threshold Characteristics of Silicon Oscillistors

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Abstract

Experimental evidence on the dependence of the threshold parameters of silicon oscillistors on magnetic induction, temperature, and injecting-contact separation is presented. Bulk helical instability of semiconductor plasma is shown to develop in this kind of oscillistors in a wide range of temperatures between 77 and 400 K. The threshold electric-field strength (resulting in plasma instability), threshold voltage, threshold current strength, and threshold power from a supply source in relation to the above factors are well described within a finite-size semiconductor sample theory. This approach accounts for the concentration gradient in nonequilibrium charge carriers in a direction normal to the vectors of the electric-field strength and magnetic induction. Rough estimation shows that the mean value of the relative concentration gradient in the samples under study is about 103 m–1 at 77 and 291 K.

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Authors and Affiliations

  1. Siberian Physicotechnical Institute at Tomsk State University, Russia

    V. I. Gaman & P. N. Drobot

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  1. V. I. Gaman
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  2. P. N. Drobot
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Gaman, V.I., Drobot, P.N. Threshold Characteristics of Silicon Oscillistors. Russian Physics Journal 44, 55–60 (2001). https://doi.org/10.1023/A:1011360818911

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  • DOI: https://doi.org/10.1023/A:1011360818911

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