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Special Features of Local Photoelectrical Properties of Inhomogeneous Metal–Insulator–Semiconductor Structures

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Abstract

Local photoelectrical measurements are used to study anomalous electrical properties of metal–insulator–semiconductor structures (decrease in photoemf in inversion). The inhomogeneous surface potential in the gap between the regions beneath and behind the electrode and between different parts of the region beneath the electrode may lead to a decrease in the local photoemf in inversion.

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Authors and Affiliations

  1. Siberian Physicotechnical Institute, Tomsk State University, Russia

    A. V. Voitsekhovskii, S. N. Nesmelov, O. G. Lanskaya & E. P. Lilenko

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  1. A. V. Voitsekhovskii
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  2. S. N. Nesmelov
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  3. O. G. Lanskaya
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  4. E. P. Lilenko
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Voitsekhovskii, A.V., Nesmelov, S.N., Lanskaya, O.G. et al. Special Features of Local Photoelectrical Properties of Inhomogeneous Metal–Insulator–Semiconductor Structures. Russian Physics Journal 43, 1020–1022 (2000). https://doi.org/10.1023/A:1011307814598

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  • DOI: https://doi.org/10.1023/A:1011307814598

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