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The growth of Si1−x−yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition

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Journal of Materials Science Letters

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China

    Jingyun Huang, Zhizhen Ye, Zhen Qi & Duanlin Que

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  1. Jingyun Huang
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  2. Zhizhen Ye
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  3. Zhen Qi
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  4. Duanlin Que
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Huang, J., Ye, Z., Qi, Z. et al. The growth of Si1−x−yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition. Journal of Materials Science Letters 20, 1173–1175 (2001). https://doi.org/10.1023/A:1010977331722

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