Diffusion of Noble Metals, Zn and Ge in GaSb Single Crystals

Abstract

Diffusion of Cu, Ag, Au, Ge and Zn in single crystal gallium antimonide has been carried out by measuring Hall effect according to van der Pauw, conductivity, energy dispersive X-ray (EDX) and surface electron microscopy. The best results have been obtained in excess of antimony. The resulting diffusion data in GaSb are diffusivity D_o, activation enthalpy Q, carrier density p and mobility µ at 300 K:

Ag: D_o=1.8·10⁻⁴ cm² s⁻¹, Q=1.2 eV, p=6·10¹⁸ cm⁻³, µ=550 cm² (Vs)⁻¹

Au: D_o=6.6·10⁺³ cm² s⁻¹, Q=2.7 eV, p=5·10¹⁸ cm⁻³, µ=500 cm² (Vs)⁻¹

Cu: D_o=3.2·10⁺⁸ cm² s⁻¹, Q=2.7 eV, p=2·10¹⁸ cm⁻³, µ=150 cm² (Vs)⁻¹

Zn: D_o=9.2·10⁻² cm² s⁻¹, Q=1.8 eV, p=2·10²⁰ cm⁻³, µ=80 cm² (Vs)⁻¹

Ge: D_o=1.0·10⁻¹ cm² s⁻¹, Q=1.7 eV, p=1·10¹⁹ cm⁻³, µ=320 cm² (Vs)⁻¹.