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Ion Implantation of Optical Ferroelectrics

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Abstract

We discuss ion implantation as a powerful non-equilibrium processing technology and show its potential for optical waveguide formation by damage engineering and by direct doping. Also the strong improvement of photorefractive properties by implantation-induced vacancies is demonstrated. Finally recent results of the growth of thin ferroelectric films by laser epitaxy and metal-organic vapor-phase epitaxy are presented. The combination of thin film growth techniques of optical ferroelectrics together with ion beam modification will prove important in this strongly advancing field.

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Authors and Affiliations

  1. Institute for Thin Film and Ion Technology (ISI-IT), Forschungszentrum Juelich GmbH, D-52425, Juelich, Germany

    Ch. Buchal

  2. Institute of Quantum Electronics, ETH Hoenggerberg, 8093, Zuerich, Switzerland

    D. Fluck & P. Gu¨nter

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  1. Ch. Buchal
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  2. D. Fluck
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  3. P. Gu¨nter
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Buchal, C., Fluck, D. & Gu¨nter, P. Ion Implantation of Optical Ferroelectrics. Journal of Electroceramics 3, 179–193 (1999). https://doi.org/10.1023/A:1009951311965

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