Abstract
A simplified analytical treatment of rather complex defect equilibria involving systems with multivalent dopants is presented. This approach is first demonstrated for the case of Gd2Ti2O7; doped with multiple valent donors, in which the effects of variations in donor ionization levels and in the equilibrium constants on the defect equilibria are examined. The conductivity data of U doped CeO2 are then evaluated, leading to equilibrium constants in good agreement with previous results, but allowing a more complete analysis.
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Tuller, H.L., Porat, O. Simplified Analytical Treatment of Defect Equilibria: Applications to Oxides with Multivalent Dopants. Journal of Electroceramics 1, 41–49 (1997). https://doi.org/10.1023/A:1009946314849
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DOI: https://doi.org/10.1023/A:1009946314849