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Epitaxial Growth and Luminescent Properties of Mn2+-Activated ZnGa2O4 Films

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Abstract

The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties.

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Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831-6056

    Yong Eui Lee, David P. Norton, John D. Budai, Christopher M. Rouleau & Jae-Won Park

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  1. Yong Eui Lee
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  2. David P. Norton
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  3. John D. Budai
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  4. Christopher M. Rouleau
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  5. Jae-Won Park
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Lee, Y.E., Norton, D.P., Budai, J.D. et al. Epitaxial Growth and Luminescent Properties of Mn2+-Activated ZnGa2O4 Films. Journal of Electroceramics 4, 293–297 (2000). https://doi.org/10.1023/A:1009946105898

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  • DOI: https://doi.org/10.1023/A:1009946105898

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