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The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors

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Abstract

Calculations have been performed for the processes occurring in cadmium–mercury tellurides exposed to high-power pulsed beams in the region of high power densities. In particular, the depth distributions of the target temperature and temperature gradients, the quasi-static and dynamic stresses, and the effect of these factors on the redistribution of the interstitial impurity atoms have been calculated.

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Authors and Affiliations

  1. Tomsk State University, Russia

    A. V. Voitsekhovsky, A. P. Kokhanenko & S. A. Shulga

Authors
  1. A. V. Voitsekhovsky
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  2. A. P. Kokhanenko
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  3. S. A. Shulga
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Voitsekhovsky, A.V., Kokhanenko, A.P. & Shulga, S.A. The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors. Russian Physics Journal 43, 729–734 (2000). https://doi.org/10.1023/A:1009471718086

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