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Anomalous Dependence of Small-Angle IR Scattering on Photoexcitation Power and Surface-Layer Defects in Mechanically Polished Silicon and Germanium Single Crystals

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Abstract

Physical processes resulting in the anomalous (cubic) dependence of the small-angle IR scattering intensity from near-surface layers of mechanically polished silicon and germanium wafers on the photoexcitation power were revealed. It was shown that extended linear defects and dislocations in the damaged region contribute predominantly to carrier scattering.

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Authors and Affiliations

  1. Natural-Science Research Center, Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942, Russia

    V. A. Yur'ev

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  1. V. A. Yur'ev
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Yur'ev, V.A. Anomalous Dependence of Small-Angle IR Scattering on Photoexcitation Power and Surface-Layer Defects in Mechanically Polished Silicon and Germanium Single Crystals. Russian Microelectronics 30, 40–42 (2001). https://doi.org/10.1023/A:1009421825142

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  • DOI: https://doi.org/10.1023/A:1009421825142

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