Abstract
Zinc oxide (ZnO) thin films were prepared following a chemical, deposition technique using a sodium zincate bath. Structural characterizations by scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate the formation of ZnO film with a preferred c-axis orientation. The electrical conductance of the ZnO films became stable and reproducible in the 300–500 K temperature range with two activation energy barrier values of 0.3 eV and 0.8 eV in the low temperature (300–420 K) and high temperature (430–500 K) ranges, respectively. The ZnO films prepared by this method are highly resistive, indicating the presence of a large density of oxygen adsorbed acceptor-like trap states (O -2 , O-, etc.). Palladium sensitized ZnO films were exposed to hydrogen (H2) with air as a carrier gas at different operating temperatures ranging between 150–375°C and the response is evaluated.
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Mitra, P., Chatterjee, A.P. & Maiti, H.S. Chemical deposition of ZnO films for gas sensors. Journal of Materials Science: Materials in Electronics 9, 441–445 (1998). https://doi.org/10.1023/A:1008993706957
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DOI: https://doi.org/10.1023/A:1008993706957