Abstract
We demonstrate a method for successfully controlling carbon incorporation in AlAs layers grown by atomic layer epitaxy (ALE) using various GaAs substrates with different orientations. The number of alkyl radicals attached to an Al atom at the surface, which is a main factor in carbon incorporation, can be intentionally controlled by changing substrate orientation. We found that the carbon incorporation in ALE-AlAs using the (3 1 1)B surface is 2 x 1017,cm-3, which is the lowest value ever reported for ALE-AlAs that satisfies one-monolayer self-limiting growth conditions.
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References
T. SUNTOLA and M. J. ANTON, US Patent No. 4 058 430 (1997).
S. P. DENBAARS, P. D. DAPKUS, C. A. BEYLER, A. HARIZ and K. M. DZUKO, J. Cryst. Growth 93 (1988) 195.
M. OZEKI K. MOCHIZUKI, N. OHTSUKA and K. KODAMA, J. Vac. Sci. Technol. B 5 (1987) 1184.
K. FUJII, I. SUEMUNE and M. YAMANISHI, Appl. Phys. Lett. 62 (1993) 1420.
A. DOI, Y. AOYAGI and S. NAMBA, ibid. 49 (1986) 785.
Y. KAWAKYU, H. ISHIKAWA, M. SASAKI and M. MASHITA, in “Proceedings of the Ninth Alloy Semiconductor Physics and Electronics Symposium” (Izu-Nagaoka, June 1990) p. 25.
H. OHNO, S. OHTSUKA, A. OHUCHI, Y. MATSUBARA and H. HASEGAWA, J. Cryst. Growth 93 (1988) 342.
M. I SHIZAKI, N. KANO, J. YOSHINO and H. KUKIMOTO, Thin Solid Films 225 (1993) 74.
H. YOKOYAMA, M. SHINOHARA and N. INOUE, Appl. Phys. Lett. 60 (1992) 377.
N. KANO, M. DEURA, M. ISHIZAKI, J. YOSHINO and H. KUKIMOTO, in “Proceedings of the Eleventh Alloy Semiconductor Physics and Electronics Symposium”, (Kyoto, June 1992) 285.
N. INOUE, H. YOKOYAMA, M. SHINOHARA and T. MURASHITA, Surf. Sci. 267 (1992) 34.
N. KANO, M. DEURA, M. ISHIZAKI, J. YOSHINO and H. KUKIMOTO, Unpublished work.
S. HIROSE, N. KANO, M. DEURA, K. HARA, H. MUNEKATA and H. KUKIMOTO, Jpn. J. Appl. Phys. 34 (1995) L1436.
N. KANO, S. HIROSE, K. HARA, H. MUNEKATA and H. KUKIMOTO, Appl. Phys. Lett. 65 (1994) 1115.
N. KANO, S. HIROSE, K. HARA, H. MUNEKATA and H. KUKIMOTO, Appl. Surf. Sci. 82/83 (1994) 132.
S. HIROSE, A. YOSHIDA, M. YAMAURA and H. MUNEKATA, Appl. Phys. Lett. 74 (1999) 964.
S. HIROSE, A. YOSHIDA, M. YAMAURA, K. HARA and H. MUNEKATA, Jpn. J. Appl. Phys. 38 (1999) 1516.
N. H. KARAM, V. HAVEN, S. M. VERNON, N. EL-MASRY, E. H. LINGUNIS and N. HAEGEL, J. Cryst. Growth 107 (1991) 129.
S. M. BEDAIR, B. T. MCDERMOTT, Y. IDE, N. H. KARAM, H. HASHEMI, M. A. TISCHLER, M. TIMONS, J. C. L. TARN and N. EL-MASRY, ibid. 93 (1988) 182.
H. ISSHIKI, Y. AOYAGI, T. SUGANO, S. IWAI and T. MEGURO, Appl. Phys. Lett. 63 (1993) 1528.
S. HIROSE, A. YOSHIDA, M. YAMAURA, K. HARA and H. MUNEKATA, in abstracts of the Forty-fourth Spring Meeting of Japan Society of Applied Physics and Related Societies, (Chiba, March 1997) 1, p. 205 (in Japanese).
N. C. FATESCHI and P. D. DAPKUS, J. Cryst. Growth 124 (1992) 192.
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Hirose, S., Yoshida, A., Yamaura, M. et al. Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates. Journal of Materials Science: Materials in Electronics 11, 7–10 (2000). https://doi.org/10.1023/A:1008991717393
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DOI: https://doi.org/10.1023/A:1008991717393