Abstract
R0A is an important measure of diode performance. In theory, it should be possible to predict R0 from material parameters; in particular composition, carrier concentration and lifetime. We have tested this hypothesis by making diodes in fully characterized material and comparing the measured and predicted R0. Three types of undoped epitaxial CdHgTe were used and the junctions were formed by ion beam milling. At 192 K the predicted and measured R0 values are comparable. At this temperature, diode leakage is predominantly diffusion current from the p-side of the junction and analysis of the R0 versus hole concentration data shows that Auger generation is responsible. At 77 K the situation is more complicated due to n-side leakage currents and possibly generation in the depletion layer.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C. T. Elliott, in “Properties of Narrow-gap Cadmium-based Compounds,” EMIS Datareviews Series No. 10, edited by P. Capper (IEE/EMIS, London, 1994), p. 339.
J. C. Brice, P. Capper, B. C. Easton, J. L. Page and P. A. C. Whiffin, Semicond. Sci. Technol. 2 (1987) 710.
J. Tunnicliffe, S. J. C. Irvine, O. D. Dosser and J. B. Mullin, J. Cryst. Growth 68 (1984) 245.
P. A. C. Whiffin, B. C. Easton, P. Capper and C. D. Maxey, ibid. 79 (1986) 935.
R. H. Hartley, M. A. Folkard, D. Carr, P. J. Orders, D. Rees, I. K. Varga, V. Kumar, G. Shen, T. A. Steele, H. Buskes and J. B. Lee, J. Vac. Sci. Technol. B 10 (1992) 1410.
S. Barton, P. Capper, A. Mcallister, C. L. Jones and N. Metcalfe, Semicond. Sci. Technol. 8 (1993) S81.
M. V. Blackman, D. E. Charlton, M. D. Jenner, D. R. Purdy, J. T. M. Wotherspoon, C. T. Elliott and A. M. White, Electron. Lett. 23 (1987) 978.
J. Brice and P. Capper(Eds), “Properties of Mercury Cadmium Telluride”, EMIS Data Review Series No. 3 (INSPEC/IEE, London, 1987).
S. Barton, M. Hastings, P. Capper, C. L. Jones and N. Metcalfe (J. Mater. Sci.:Mater. Electron, this volume).
S. E. Schacham and E. Finkman, J. Vac. Sci. Technol. A 7 (1989) 387.
N. T. Gordon ( private communication, 1992).
I. Baker, in “Narrow Gap II-VI Compounds for Optoelectronic and Electromagnetic Applications” edited by P. Capper (Chapman & Hall, London, 1997), ch. 15.
C. D. Maxey, C. L. Jones, N. Metcalfe, R. Catchpole, M. Houlton, M. White, N. Gordonand C. T. Elliott, J. Electron. Mater. 25 (1996) 1276.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Barton, S.C., Hastings, M., Jones, C.L. et al. Diode R0A in p-type epitaxially grown undoped CdxHg1-xTe. Journal of Materials Science: Materials in Electronics 10, 161–166 (1999). https://doi.org/10.1023/A:1008984720335
Issue Date:
DOI: https://doi.org/10.1023/A:1008984720335