Abstract
Single crystals of p-type SnSe were grown by both direct vapor transport (DVT) and chemical vapor transport (CVT) techniques. The d.c. electrical resistivity anisotropy has been investigated for the first time in these layered crystals. The DVT grown crystals exhibited a large anisotropy ratio and also a higher activation energy compared to that of CVT grown crystals. The electron microscopic examination revealed the presence of a large concentration of stacking faults in the DVT grown crystals. The resistivity anisotropy is accordingly discussed in terms of stacking disorder.
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Agarwal, A., Vashi, M.N., Lakshminarayana, D. et al. Electrical resistivity anisotropy in layered p-SnSe single crystals. Journal of Materials Science: Materials in Electronics 11, 67–71 (2000). https://doi.org/10.1023/A:1008960305097
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DOI: https://doi.org/10.1023/A:1008960305097