Abstract
The development of stress in the SrBi2Ta2O9 (SBT) films generated from a chemical solution deposition method was monitored during processing using wafer curvature measurements. Stress measurements of the entire Si/SiO2/Pt/SBT stack revealed an overall tensile stress of ∼536 MPa. The greatest increase in tensile stress was recorded for the anneal of the Pt bottom electrode and was due to the thermal expansion mismatch. Deposition of an amorphous SBT layer on the Pt, followed by a low temperature anneal (300°C), had little overall effect on the stress of the stack; however, upon crystallization, significantly more tensile stress was introduced into the stack. To further investigate the effect that stress has on the various electrical properties SBT films, wafers with different stress states were produced and SBT films deposited on them. Initial investigations indicate that SBT films on wafers with a higher tensile stress displayed improved ferroelectric hysteresis and switchable polarization.
Similar content being viewed by others
References
See for example: Integrated Ferroelectrics, 1997, 17–18, Eds. D.B. Dimos and B.A. Tuttle.
See for example: (a) Ferroelectric Thin Films IV, Mater. Res. Soc. Symp. Proc., 1995, 361, (b) Ferroelectric Thin Films V, Mater. Res. Soc. Symp. Proc., 1996, 433.
R.E. Jones, P. Zurcher, P. Chu, D.J. Taylor, Y.T. Lii, B. Jiang, P.D. Maniar, and S.J. Gillespie, Microelectronic Engineering 29, 3 (1995).
H.N. Al-Shareef, D. Dimos, T.J. Boyle, W.L. Warren, and B.A. Tuttle, Appl. Phys. Lett. 68, 690 (1996).
T. Noguchi, T. Hase, and Y. Miyasaka, Jpn. J. Appl. Phys. Part 1, 9B, 4900 (1996).
K. Amanuma, T. Hase, and Y. Miyasaka, Ferroelectric Thin Films IV, Mater. Res. Soc. Symp. Proc. 361, 21 (1995).
T.J. Boyle, U.S. Patent No. 5 683 614, 1997.
T.J. Boyle, C.D. Buchheit, M.A. Rodriguez, H.N. Al-Shareef, B.A. Hernandez, B. Scott, and J.W.J. Ziller, Mater. Res. 11, 2274 (1996).
K. Kato, J.M. Finder, S.K. Dey, and Y. Torii. Integrated Ferroelectrics 18, 237 (1997).
I. Koiwa, K. Tani, J. Mita, and T. Iwabuchi, Jap. J. Appl. Phys. Part 1 37, 192 (1998).
T. Hayashi, H. Takahashi, and T. Hara, Jap. J. Appl. Phys. Part 1 35, 4952 (1996).
K.B. Lee, H.S. Lee, and S.K.J. Cho, Korean Phys. Soc. 32, S1565 (1998).
T. Osaka, S. Ono, A. Sakakibara, and I. Koiwa, IEICE Trans. Elect. E81C, 545 (1998).
P.C. Joshi, S.O. Ryu, X. Zhang, and S.B.J. Desu, Korean Phys. Soc. 32, S1583 (1998).
“Tencor FLX-2908 Thin Film Stress Measurements” User Manual 2400 Charleston Rd, Mountain View CA 94043.
P. Yang, Ph.D. Thesis, University of Illinois at Urbana-Champaign, 1992.
S.B. Desu, J. Electrochem. Soc. 140, 2981 (1993).
G.A.C.M. Spierings, G.J.M. Dormans, W.G.J. Moors, M.J.E. Ulenaers, and P.K.J. Larsen, Appl. Phys 78, 1926 (1995).
B.A. Tuttle, J.A. Voigt, T.J. Garino, D.C. Goodnow, R.W. Schwartz, D.L. Lamppa, T.J. Headley, and M.O. Eatough, Proc. IEEE 8th Intl. Symp. Appl. Ferroelectrics 344, (1992).
J.-S. Lee, J.-W. Park, J.-S. Park, H.-D. Park, and S.-M. Shin, J. Mater. Sci. Lett. 16, 941 (1997).
T. Noguchi, T. Hase, and Y. Miyasaka, Jpn. J. Appl. Phys. Part 1 9b, 4900 (1996).
K. Watanabe, M. Tanaka, N. Nagel, K. Katori, M. Sugiyama, H. Yamamoto, and H. Yagi, Integrated Ferroelectrics 17, 451 (1997).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lakeman, C.D., Ruffner, J.A. & Boyle, T.J. Stress Measurements and Processing Optimization for Solution Derived SrBi2Ta2O9 Thin Films. Journal of Sol-Gel Science and Technology 16, 83–91 (1999). https://doi.org/10.1023/A:1008765221865
Issue Date:
DOI: https://doi.org/10.1023/A:1008765221865