Abstract
The sensitization caused by the adsorption of a ruthenium complex in a niobium thin film (d < 300 nm) was analysed by photoelectrochemical measurements. The films were coated on a indium-tin-oxide (ITO) conductor glass by a dip-coating technique. The non-sensitized film had only photoelectrochemical current in the UV region (i ≤ 40 nA). The sensitization of the film by cis-dithiocyanate (2,2-bipyridyl-4,4′dicarboxylic acid) ruthenium(II) complex altered the shape of the non-normalized action spectrum with the presence of photoelectrochemical current in the visible range (λ ≥ 400 nm). This photoelectrochemical current (i ≤ 70 nA) was associated with electron injection into the niobium pentoxide conduction band due to metal-to-ligand charge-transfer (MLCT) of the ruthenium complex. The shape of the action spectrum in the UV range (λ ≤ 400 nm) changed with the application of an electric potential to the film surface and the photoelectrochemical current associated with the ligand-to-metal charge transfer of niobia film decreased for higher ruthenium concentration.
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Barros Filho, D.D.A., Abreu Filho, P.P., Alves, O.L. et al. Sensitization of Niobium Pentoxide Thin Films by cis-Dithiocyanate (2,2-bipyridyl-4,4′dicarboxylic acid) Ruthenium(II) Complex. Journal of Sol-Gel Science and Technology 18, 259–267 (2000). https://doi.org/10.1023/A:1008752124254
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DOI: https://doi.org/10.1023/A:1008752124254