Abstract
The purpose of the present work is to study the crystallography of a particular family of interfaces, Σ3 boundaries in copper, in the context of the relationships between Σ3 plane indices, their deviation from reference planes, and the deviation from exact Σ3 matching, v/vm. The relatively high values of v/vm recorded were considered to be the result of texture development during annealing and various ‘back twinning’ and Σ3n impingement interactions. The results show that there is a reasonable correlation between the deviation from a reference misorientation (v/vm) and the deviation from reference interface plane (R). Measurement of v/vm alone provides an indirect estimate of the plane type and hence energy of the boundary, at least for Σ3 boundaries, and moreover is more germane to the experimental mode of data collection. The effect of intragrain orientation variations on the interface parameters was also studied, and it was shown that there is a 20% difference between misorientations calculated near the interface compared with displaced from the interface.
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Randle, V., Davies, P. Deviation from Reference Planes and Reference Misorientation for Σ3 Boundaries. Interface Science 7, 5–13 (1999). https://doi.org/10.1023/A:1008734331685
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DOI: https://doi.org/10.1023/A:1008734331685