Abstract
Textured calcium modified (Pb,La)TiO3 (PLCT) films were deposited on Pt/Ti/SiO2/Si substrates by using a metal-organic decomposition (MOD) process. The PLCT films exhibit good ferroelectric properties, a very low leakage current and a sharp PLCT/Pt interface. The (100) texture of the PLCT film is growth-controlled; the (100) oriented grains grow preferentially so as to minimize the surface energy. Particularly, the (100) preferred orientation is easy to form in the PLCT film with a layered structure for which the substrate almost does not affect the nucleation and growth of the film.
Similar content being viewed by others
References
J.F. Scott and A.P.D. Araujo, Science 246, 1400 (1989).
R. Takayama and Y. Tomita, Ferroelectrics 118, 325 (1991).
H. Ohtani, M. Okuyama, and Y. Hamakawa, Jpn. J. Appl. Phys. 23, 133 (1984).
S.J. Martin, M.A. Bulter, and C.E. Land, Electron. Lett. 24, 1486 (1988).
K. Iijima, R. Takayama, Y. Tomita, and I. Veda, J. Appl. Phys. 60, 2914 (1986).
A.R. Khan and S.B. Desu, J. Mater. Res. 10, 2777 (1995).
K. Aaoki, Y. Fukuda, K. Numuta, and A. Nishimura, Jpn. J. Appl. Phys. Part I, 32(B9), 5155 (1994).
L.R. Zheng, P.X. Yang, W.P. Xu, C.L. Lin, W.B. Wu, and M. Okuyama, Integrated Ferroelectric 20, 73 (1998).
V.E. Wood, J.R. Busch, S.D. Ramamurthi, and S.L. Swartz, J. Appl. Phys. 72, 4557 (1992).
Zhitang Song, Chenglu Lin, Jipo Huang, Jianming Zeng, Jianxia Gao, Huaping Xu, and Masawori Okuyama, Material Lett., 40, 83 (1999).
Z.T. Song, W. Ren, L.Y. Zhang, and X. Yao, Acta Physica Sinica, 7, 292 (1998).
T. Tani, Z. Xu, and D.A. Payne, in Ferroelectric thin films III, Material Research Society Symposium Proceeding (Material Research Society Pittsburgh, PA, 1993), Vol. 310, p. 263.
Y.M. Liu and P.P. Phule, J. Am. Ceram. Soc. 79, 495 (1996).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Song, Z., Lin, C., Zhu, X. et al. Textured PLCT Thin Films Prepared on Pt/Ti/SiO2/Si Substrate by Metal-Organic Decomposition. Journal of Sol-Gel Science and Technology 20, 51–60 (2001). https://doi.org/10.1023/A:1008724600779
Issue Date:
DOI: https://doi.org/10.1023/A:1008724600779