Abstract
Composite SiO2-iron oxide materials were prepared by three experimental procedures. In the first case (1), the iron oxides were precipitated during the sol-gel process. In the second case (2), the SiO2 matrix was initially obtained, and the iron oxides were formed by thermal treatment after impregnation of a soluble Fe2+ salt in the previously processed matrix. In the third method (3), ferrite powders, prepared by wet chemical method, were embedded into a SiO2 based sol-gel matrix. Two type of precursors (tetraethoxysilane (TEOS) or methyltriethoxysilane (MTEOS) were used as SiO2 sources. Various properties versus both type of precursor and on the method of preparation were noticed. Materials with high porosity and nano-sized iron oxide content could be prepared using the mentioned above methods.
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T. Yoshino, C. Kawaguchi, F. Kanamura, and K. Takahashi, J. Non-Cryst. Solids 43, 129 (1981).
S. Tanabe, T. Ida, M. Suginava, A. Ueno, Y. Kotera, K. Tohiji, and Y. Udagawa, Chem. Lett. (1984) 1567.
T. Akiyama, E. Tanigawa, T. Ida, H. Tsuiki, and A. Ueno, Chem. Lett. (1986) 723.
A. Chatterjee and D. Chakrovorky, Appl. Phys. 22, 1386 (1986).
G. Meezinskis, G.H. Frischat, and E. Rädlein, J. Sol-Gel Sci. Technol. 8, 489 (1997).
T. Lopéz, J. Méndez, T. Zamudio, and M. Villa, Mat. Chem. and Phys. 30, 161 (1992).
T. Lopéz, J. Méndez-Vivar, and M. Asomoza, Thermochimica Acta 216, 279 (1993).
D. Niznansky, N. Viart, and J.L. Rehspringer, J. Sol-Gel Sci. Technol. 8, 615 (1997).
K. Tanaka, K. Kamiya, M. Matsuoka, and T. Yoko, J. Non-Cryst. Solids 94, 366 (1987).
B.R. Angel and P.L. Hall, in Proc. Int. Clay Conf. (Madrid, 1972), p. 47.
B.R. Angel and W.E.J. Vincent, Clays Clay Miner. 26, 263 (1978).
C. Craciun and A. Meghea, Clay Miner. 20, 281 (1985).
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Zaharescu, M., Crisan, M., Jitianu, A. et al. SiO2-Iron Oxide Composites Obtained by Sol-Gel Method. Journal of Sol-Gel Science and Technology 19, 631–635 (2000). https://doi.org/10.1023/A:1008722506918
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DOI: https://doi.org/10.1023/A:1008722506918