Abstract
Ferroelectric SrBi2Ta2O9 film was prepared using the sol-gel technique. The sol-gel precursor resulted in good ferroelectric performance at annealing temperatures as low as 700°C. The baking profiles changed the orientation and the grain size in the film. The finer grain size and the higher switching charge were consistent under the slower baking profile.
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Okuwada, K. Effects of Baking and Annealing Processes on SrBi2Ta2O9 Film by Sol-Gel Method. Journal of Sol-Gel Science and Technology 16, 77–81 (1999). https://doi.org/10.1023/A:1008713205027
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DOI: https://doi.org/10.1023/A:1008713205027