Skip to main content
Log in

Effect of Metallic Oxides Containing Composite Electrodes on Crystallization and Ferroelectric Properties of Pb(Zr0.52,Ti0.48)O3 Thin Films Deposited by the Sol-Gel Method

  • Published:
Journal of Sol-Gel Science and Technology Aims and scope Submit manuscript

Abstract

In order to suppress polarization fatigue and decrease the leakage current of the PZT capacitor, composite electrodes consisting of MO2 (RuOx or IrOx) as an effective diffusion barrier and considerably large amounts of Pt were deposited by magnetron co-sputtering to yield heterostructured PZT capacitors, Pt/(Pt+MO2)//PZT(52/48)//(Pt+MO2)/(Pt+M)/M/Pt/Ti(Ta)/SiO2/Si(1 0 0), and the crystallinity and the orientation, the morphology of the surface and the cross section, and the composition depth profile of the PZT capacitor were examined by XRD analysis, SEM and AES, respectively, and the ferroelectric properties were measured. The results indicated that by adjusting the distribution and composition of the RuO2 phase, the polarization loss of the PZT capacitor can be suppressed to as small as 5% after polarization reversals of 109 while maintaining the effective polarization dPr = Pr* − Pr ^ at 15 μC/cm2. The suppression of the polarization fatigue was found more effective with (Pt+IrO2) electroding than (Pt+RuO2) electroding. The leakage current of the PZT capacitor electroded with (Pt+MO2) was a little larger than that of the PZT capacitor with Pt electrode. The possible reason was suggested.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. D.P. Vijay, C.K. Kwok, W. Pan, I.K. Yoo, and S.B. Desu, ISAF Proceedings, IEEE Publication No. 92CH3080–9, p. 408 (1992).

  2. H.N. Al-shareef, K.R. Bellur, O. Auciello, and A.K. Kingon, Ferroelectrics 152, 85 (1994).

    Google Scholar 

  3. H.N. Al-shareef, A.I. Kingon, X. Chen, K.R. Bellur, and O. Auciello, J. Mat. Res. 9, 2968 (1994).

    Google Scholar 

  4. H.N. Al-shareef, A.I. Kingon, X. Chen, K.R. Bellur, and O. Auciello, Appl. Phys. Lett. 66, 239 (1995).

    Google Scholar 

  5. H.N. Al-shareef, K.R. Bellur, O. Auciello, and A.I. Kingon, Thin Solid Films 256, 73 (1995).

    Google Scholar 

  6. H.N. Al-shareef, V.A. Tuttle, W.L. Warren, T.J. Headley, D. Dimos, J.A. Voigt, and R.D. Nasby, J. Appl. Phys. 79(2), 1013 (1996).

    Google Scholar 

  7. H.N. Al-shareef, T.L. Chen, O. Auciello, and A.I. Kingon, MRS 361, 229 (1995).

    Google Scholar 

  8. I. Chung, J.K. Lee, W.I. Lee, and C.W. Chung, MRS 361, 249 (1995).

    Google Scholar 

  9. B.A. Tuttle, in Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh chap. 6, (Kluwer Academic Publisher, Boston, 1997).

    Google Scholar 

  10. H.N. Al-shareef and A.I. Kingon, in Ferroelectric Thin Films: Synthesis and Basic Properties, edited by C.P. Araujo, J.F. Scott, and G.W. Taylor chap. 7, (Gordon and Breach Publishers, 1996).

  11. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys. 34, 5184 (1995).

    Google Scholar 

  12. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys. 33, 5207 (1994).

    Google Scholar 

  13. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett. 65(12), 1522 (1994).

    Google Scholar 

  14. B.A. Tuttle, H.N. Al-shareef, W.L. Warren, M.V. Raymond, T.J. Headley, and J.A. Voight, Microelectronic Eng. 29, 233 (1995).

    Google Scholar 

  15. R. Ramesh, T. Sands, and V.G. Keramidas, J. Electronic. Mat. 23(1), 19 (1994).

    Google Scholar 

  16. R. Ramesh, H. Gilchrist, T. Sands, and V.G. Keramidas, Appl. Phys. Lett. 63(26), 3592 (1993).

    Google Scholar 

  17. R. Dat, D. Lichtenwalner, O. Auciello, and A.I. Kingon, Appl. Phys. Lett. 64(20), 2673 (1994).

    Google Scholar 

  18. R. Ramesh, J.L. Sands, and V.G. Keramidas, Appl. Phys. Lett. 64(19), 2511 (1994).

    Google Scholar 

  19. H.N. Al-shareef, B.A. Tuttle, W.L. Warren, M.V. Raymond, and M.A. Rodoriguez, Appl. Phys. Lett. 68(2), 272 (1996).

    Google Scholar 

  20. A.M. Dhote, S. Madhukar, W. Wei, and T. Venkatesan, Appl. Phys. Lett. 68(10), 1350 (1996).

    Google Scholar 

  21. A.M. Dhote, S. Madhukar, D. Young, T. Venkatesan, and R. Ramesh, J. Mat. Res. 12(6), 1589 (1997).

    Google Scholar 

  22. S. Aggarwal, B. Yang, and R. Ramesh, in Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh chap. 9, (Kluwer Academic Publisher, Boston, 1997).

    Google Scholar 

  23. C.B. Eom, R.B. Van Dover, Julia. M. Phillips, D.J. Werder, J.H. Marshall, C.H. Chen, R.J. Cava, R.M. Fleming, and D.K. Fork, Appl. Phys. Lett. 63, 2570 (1993).

    Google Scholar 

  24. H. Doi, T. Atsuki, N. Soyama, G. Sasaki, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys. 33, 5159 (1994).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Doi, H., Kageyama, K. Effect of Metallic Oxides Containing Composite Electrodes on Crystallization and Ferroelectric Properties of Pb(Zr0.52,Ti0.48)O3 Thin Films Deposited by the Sol-Gel Method. Journal of Sol-Gel Science and Technology 16, 21–27 (1999). https://doi.org/10.1023/A:1008705003209

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1008705003209

Navigation