Abstract
In order to suppress polarization fatigue and decrease the leakage current of the PZT capacitor, composite electrodes consisting of MO2 (RuOx or IrOx) as an effective diffusion barrier and considerably large amounts of Pt were deposited by magnetron co-sputtering to yield heterostructured PZT capacitors, Pt/(Pt+MO2)//PZT(52/48)//(Pt+MO2)/(Pt+M)/M/Pt/Ti(Ta)/SiO2/Si(1 0 0), and the crystallinity and the orientation, the morphology of the surface and the cross section, and the composition depth profile of the PZT capacitor were examined by XRD analysis, SEM and AES, respectively, and the ferroelectric properties were measured. The results indicated that by adjusting the distribution and composition of the RuO2 phase, the polarization loss of the PZT capacitor can be suppressed to as small as 5% after polarization reversals of 109 while maintaining the effective polarization dPr = Pr* − Pr ^ at 15 μC/cm2. The suppression of the polarization fatigue was found more effective with (Pt+IrO2) electroding than (Pt+RuO2) electroding. The leakage current of the PZT capacitor electroded with (Pt+MO2) was a little larger than that of the PZT capacitor with Pt electrode. The possible reason was suggested.
Similar content being viewed by others
References
D.P. Vijay, C.K. Kwok, W. Pan, I.K. Yoo, and S.B. Desu, ISAF Proceedings, IEEE Publication No. 92CH3080–9, p. 408 (1992).
H.N. Al-shareef, K.R. Bellur, O. Auciello, and A.K. Kingon, Ferroelectrics 152, 85 (1994).
H.N. Al-shareef, A.I. Kingon, X. Chen, K.R. Bellur, and O. Auciello, J. Mat. Res. 9, 2968 (1994).
H.N. Al-shareef, A.I. Kingon, X. Chen, K.R. Bellur, and O. Auciello, Appl. Phys. Lett. 66, 239 (1995).
H.N. Al-shareef, K.R. Bellur, O. Auciello, and A.I. Kingon, Thin Solid Films 256, 73 (1995).
H.N. Al-shareef, V.A. Tuttle, W.L. Warren, T.J. Headley, D. Dimos, J.A. Voigt, and R.D. Nasby, J. Appl. Phys. 79(2), 1013 (1996).
H.N. Al-shareef, T.L. Chen, O. Auciello, and A.I. Kingon, MRS 361, 229 (1995).
I. Chung, J.K. Lee, W.I. Lee, and C.W. Chung, MRS 361, 249 (1995).
B.A. Tuttle, in Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh chap. 6, (Kluwer Academic Publisher, Boston, 1997).
H.N. Al-shareef and A.I. Kingon, in Ferroelectric Thin Films: Synthesis and Basic Properties, edited by C.P. Araujo, J.F. Scott, and G.W. Taylor chap. 7, (Gordon and Breach Publishers, 1996).
T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys. 34, 5184 (1995).
T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys. 33, 5207 (1994).
T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett. 65(12), 1522 (1994).
B.A. Tuttle, H.N. Al-shareef, W.L. Warren, M.V. Raymond, T.J. Headley, and J.A. Voight, Microelectronic Eng. 29, 233 (1995).
R. Ramesh, T. Sands, and V.G. Keramidas, J. Electronic. Mat. 23(1), 19 (1994).
R. Ramesh, H. Gilchrist, T. Sands, and V.G. Keramidas, Appl. Phys. Lett. 63(26), 3592 (1993).
R. Dat, D. Lichtenwalner, O. Auciello, and A.I. Kingon, Appl. Phys. Lett. 64(20), 2673 (1994).
R. Ramesh, J.L. Sands, and V.G. Keramidas, Appl. Phys. Lett. 64(19), 2511 (1994).
H.N. Al-shareef, B.A. Tuttle, W.L. Warren, M.V. Raymond, and M.A. Rodoriguez, Appl. Phys. Lett. 68(2), 272 (1996).
A.M. Dhote, S. Madhukar, W. Wei, and T. Venkatesan, Appl. Phys. Lett. 68(10), 1350 (1996).
A.M. Dhote, S. Madhukar, D. Young, T. Venkatesan, and R. Ramesh, J. Mat. Res. 12(6), 1589 (1997).
S. Aggarwal, B. Yang, and R. Ramesh, in Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh chap. 9, (Kluwer Academic Publisher, Boston, 1997).
C.B. Eom, R.B. Van Dover, Julia. M. Phillips, D.J. Werder, J.H. Marshall, C.H. Chen, R.J. Cava, R.M. Fleming, and D.K. Fork, Appl. Phys. Lett. 63, 2570 (1993).
H. Doi, T. Atsuki, N. Soyama, G. Sasaki, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys. 33, 5159 (1994).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Doi, H., Kageyama, K. Effect of Metallic Oxides Containing Composite Electrodes on Crystallization and Ferroelectric Properties of Pb(Zr0.52,Ti0.48)O3 Thin Films Deposited by the Sol-Gel Method. Journal of Sol-Gel Science and Technology 16, 21–27 (1999). https://doi.org/10.1023/A:1008705003209
Issue Date:
DOI: https://doi.org/10.1023/A:1008705003209