Abstract
Accurate modeling and efficient parameter extraction of a small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The small-signal equivalent circuit is based on the quasi-static approximation which was found to be adequate up to 10 GHz for MOS transistors fabricated by a 20 GHz cutoff frequency technology. The extrinsic components and substrate coupling effects are properly included. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. A low-noise amplifier is used to illustrate the effects on circuit performance due to accurate inclusion of extrinsic components in the model. Good agreement between simulated results and measured data on high-frequency transistor characteristics has been achieved.
Similar content being viewed by others
References
A. Abidi, A. Rofougaran, G. Chang, and J. Rael, “The future of CMOS wireless transceivers.” IEEE ISSCC Digest San Francisco, CA, pp. 118–119,1997.
J. Rudell, J. Ou, T. Cho, G. Chien, F. Brianti, J. Weldon, and P. Gray, “A 1.9 GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications.” IEEE ISSCC Digest San Francisco, CA, pp. 304–305,1997.
G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the Fet small-signal equivalent circuit.” IEEE Transactions on Microwave Theory and Techniques 36(7), pp. 1151–1159,1988.
D. Lovelace, J. Costa, and N. Camilleri, “Extracting smallsignal model parameters of silicon MOSFET transistors.” IEEE MTT-S Digest, pp. 865–868,1994.
W. Liu, et al. “R.F. MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model.” IEEE IEDM Digest, pp. 309–312,1997.
D. Pehlke, M. Schroter, A. Burstein, M. Matloubian, and M. Chang, “High-frequency application of MOS compact models and their development for scalable RF model libraries.” IEEE CICC Proc Santa Clara, CA, pp. 219–222,1998.
S. Jen, D. Pehlke, C. Enz, M. Schröter, and B. Sheu, Accurate MOS transistor modeling and parameter extraction valid up to 10-GHz, accepted by ESSDERC, Bordeaux, France,1998.
T. Quarles, A. Newton, D. Pederson, and A. Sangiovanni-Vincentelli, SPICE3 version 3f3 User's Manual. University of California, Berkeley, CA,1993.
Star-HSPICE User's Manual, Avant! Corporation, Fremont, CA,1996.
BSIM3v3 Manual, Departments of Electrical Engineering and Computer Sciences University of California, Berkeley, 1995–1997.
Y. Tsividis, Operation and Modeling of The MOS Transistor. McGraw-Hill, New York, NY,1987.
T. Manku, “Microwave CMOS-devices and circuits.” IEEE CICC Proc., pp. 59–65, Santa Clara,1998.
T. Lee, The Design of CMOS Radio-Frequency Integrated Circuits. Cambridge University Press, New York, NY,1998.
C. Enz, F. Krummenacher, and E. Vittoz, “An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications.” Journal of Analog Integrated Circuits and Signal Processing 8(1), pp. 83–114,1995.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Jen, S.H., Enz, C., Pehlke, D.R. et al. A High-Frequency MOS Transistor Model and its Effects on Radio-Frequency Circuits. Analog Integrated Circuits and Signal Processing 23, 93–101 (2000). https://doi.org/10.1023/A:1008399824651
Issue Date:
DOI: https://doi.org/10.1023/A:1008399824651