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A 640 by 480 Pixels Readout Circuit for IR Imaging

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Abstract

A readout circuit for a 640 × 480 pixels FPA (focal plane array) has been successfully designed, fabricated and tested. The circuit solution is based on a per pixel source-follower direct injection (SFDI) pre-amplifier. Signal multiplexing is performed in both X and Y direction. The pixel size is 25 μm × 25μm. The chip is optimized for a QWIP (quantum well infrared photodetector) operating at a temperature of 70 K. The circuit has been realized in a standard 0.8 μm CMOS process.

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References

  1. D. J. Sauer, F. L. Hsueh, F. V. Shallcross, G. M. Meray, and T. S. Villani, “A 640*480-element PtSi IR sensor with low-noise MOS X-Y addressable multiplexer.” Proceedings SPIE. 1308, pp. 81–87, 1990.

    Google Scholar 

  2. L. J. Kozlowski, “3.2 mm PACE-I HgCdTe 102461024 FPA.” 188 Electrochemical Society Meeting 1995.

  3. E. L. Dereniak and G. D. Boreman, Infrared Detectors and Systems. John Wiley & Sons, Inc.: New York, 1996.

    Google Scholar 

  4. B. F. Levine, “Quantum-well infrared photodetectors.” J. Appl. Phys. 74(8), pp. R1–R81, 1993.

    Google Scholar 

  5. J. Y. Andersson, J. Alverbo, J. Borglind, P. Helander, H. Martijn, M. Ö stlund, “320 × 240 pixels quantum well infrared photodetector (QWIP) array for thermal imaging: fabrication and evaluation.” Proceedings SPIE. 3061, pp. 740–748, 1997.

    Google Scholar 

  6. A. van der Ziel, Noise in Measurements, pp. 47–49, JohnWiley & Sons, Inc.: New York, 1976.

    Google Scholar 

  7. W. D. Rogatto, The Infrared and Electro-Optical Systems Handbook. Vol. 3, pp. 287–342, SPIE Press: Bellingham, WA, 1993.

    Google Scholar 

  8. L. J. Kozlowski, “Low noise capacitive transimpedance ampliÆer performance vs. alternative IR detector interface schemes in submicron CMOS.” Proceedings SPIE. 2745, pp. 2–11, 1996.

    Google Scholar 

  9. M. A. Blessinger, “Comparative study of linear multiplexer designs for a remote sensing application.” Proceedings SPIE 2226, pp. 172–179, 1994.

    Google Scholar 

  10. S. Selberherr, “MOS device modeling at 77 K.” IEEE Trans. On Electron Devices 36(8), 1989.

  11. F. H. Gaensslen, “MOS devices and integrated circuits at liquid nitrogen temperature.” IEEE Int. Conf. Circuits and Computers 1, pp. 450–452, 1980.

    Google Scholar 

  12. R. M. Fox and R. C. Jaeger, “MOS models and ampliÆer design for low temperature operation.” IEEE Int. Symposium on Circuits and Systems 3, pp. 1154–1156, 1986.

    Google Scholar 

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Martijn, H., Halldin, U., Helander, P. et al. A 640 by 480 Pixels Readout Circuit for IR Imaging. Analog Integrated Circuits and Signal Processing 22, 71–79 (2000). https://doi.org/10.1023/A:1008376111468

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  • DOI: https://doi.org/10.1023/A:1008376111468

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