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Robust Design of Basic Low Voltage CMOS Transconductors

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Abstract

Two new low voltage transconductors are introduced and the statistical design of these transconductors are presented. The circuits operate in the saturation region with fully balanced input signals. Initial circuit simulation results are given. Response surface methodology and design of experiment techniques are used as statistical VLSI design tools together with the statistical MOS (SMOS) model. The response surfaces obtained for the two transconductors show the trade-off between area and functional yield. Using these contours, the designer will be able to estimate the functional yield of the circuits before fabrication. The contours also provide information regarding which transistor aspect ratios are to be altered to achieve a better functional yield.

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Authors and Affiliations

  1. Istanbul Technical University, Istanbul, Turkey

    Tuna B. Tarim

  2. Analog VLSI Lab. of The Ohio State University, Columbus, Ohio, USA

    Tuna B. Tarim

  3. Department of Electronics Engineering, Istanbul Technical University, Istanbul, Turkey

    H. Hakan Kuntman

  4. Department of Electrical Engineering, The Ohio State University, Columbus, OH, 43210, USA

    Mohammed Ismail

  5. Radio Electronics Lab, Royal Institute of Technology, Kista-Stockholm, Sweden

    Mohammed Ismail

Authors
  1. Tuna B. Tarim
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  2. H. Hakan Kuntman
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  3. Mohammed Ismail
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Tarim, T.B., Kuntman, H.H. & Ismail, M. Robust Design of Basic Low Voltage CMOS Transconductors. The Journal of VLSI Signal Processing-Systems for Signal, Image, and Video Technology 22, 87–102 (1999). https://doi.org/10.1023/A:1008139005510

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