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Solutions for heteroepitaxial growth of GaN and their impact on devices

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Abstract

GaN technology relies on highly mismatched heteroepitaxial growth, mainly on sapphire or SiC substrates, and therefore suffers from 109 to 1010 threading dislocations per cm2. The origin and the deteriorating influence of the extremely high dislocation densities are analyzed with regard to the specific circumstances of GaN technology. Various attempts to cope with heteroepitaxial growth are discussed, from the use of nucleation layers to the growth on GaN single bulk crystals. Special focus is put on the impact of the approaches on the device performance.

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Authors and Affiliations

  1. Department of Optoelectronics, University of Ulm, 89069, Ulm, Germany

    Markus Kamp

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Kamp, M. Solutions for heteroepitaxial growth of GaN and their impact on devices. Optical and Quantum Electronics 32, 227–248 (2000). https://doi.org/10.1023/A:1007073421569

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