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Electroluminescent device based on AlxGa1−xAs–GaAs quantum well nanostructures

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Abstract

AlGaAs–GaAs based quantum well nanopillar arrays are fabricated by using the UV lithography and the chlorine based reactive ion etching. The nanostructure is fabricated so as to get the confinement of carriers within the i-GaAs quantum well layer of 9 nm thick sandwiched between two barrier layers of Al0.33Ga0.67As of 11 nm thick in order to induce the possible light emission from the quantum well region. The size of pillars is obtained from SEM analysis. The number of pillars available within the 1 μm2 mesa size is found to be around 400 having the pillar size between 10 and 50 nm. Electroluminesence (EL) is detected from the nanopillars when applying a forward bias voltage of ≥1.3 V and the emitted light is observed at around 830 nm.

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Authors and Affiliations

  1. Joint Research Centre for Atom Technology, NAIR, 1-1-4 Higashi, Tsukuba Science City, Ibaraki Pref. 305, Japan

    M. Manimaran & T. Kanayama

  2. Nanofabrication Facility, Department of Electrical Engineering, Indian Institute of Technology-Madras, Chennai, 600 036, India

    M. Manimaran & P.R. Vaya

Authors
  1. M. Manimaran
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  2. P.R. Vaya
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  3. T. Kanayama
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Manimaran, M., Vaya, P. & Kanayama, T. Electroluminescent device based on AlxGa1−xAs–GaAs quantum well nanostructures. Optical and Quantum Electronics 32, 1191–1199 (2000). https://doi.org/10.1023/A:1007047415109

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  • DOI: https://doi.org/10.1023/A:1007047415109

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