Abstract
The use of interdiffused quantum wells to enhance single transverse mode operation in vertical cavity surface emitting semiconductor lasers is proposed and analysed theoretically. It is found that by introducing a step diffused quantum well structure inside the core region of a quantum-well active layer, the influence of self-focusing (due to carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized. Therefore, stable single-mode operation in vertical cavity surface emitting lasers can be maintained.
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References
K. Iga, F. Koyama and S. Kinoshita, IEEE J. Quantum Electron. 24 (1988) 1845.
Y. G. Zhao and J. G. McInerney, IEEE J. Quantum Electron. 32 (1996) 1950.
G. C. Wilson, D. M. Kuchta, J. D. Walker and J. S. Smith, Appl. Phys. Lett. 64 (1994) 542.
Y. A. Wu, G. S. Li, R. F. Nabiev, K. D. Choquette, C. Caneau and C. J. Chang-Hasnain, IEEE J. Selected Topics Quantum Electron. 1 (1995) 629.
U. Fiedler, B. Moller, G. Reiner, D. Wiedenmann and K. J. Ebeling, IEEE Photon. Technol. Lett. 7 (1995) 1116.
S. F. Yu, C. W. Lo and E. H. Li, IEEE J. Quantum Electron. 33 (1997) 999.
C. L. Chua, R. L. Thornton, D. W. Treat, V. K. Yang and C. C. Dunnrowicz, IEEE Photon. Technol. Lett. 9 (1997) 551.
E. H. Li, private communication.
S. F. Yu, IEEE J. Quantum Electron. 32 (1996) 1168.
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YU, S.F., CHUI, P.C. Proposed enhancement of single mode operation in VCSELs using diffused quantum well structure. Optical and Quantum Electronics 30, 71–77 (1998). https://doi.org/10.1023/A:1006970826208
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DOI: https://doi.org/10.1023/A:1006970826208