Abstract
The main problem for creation of optical communication systems is how quickly the light intensity can be changed under radiation from a laser diode. The modulation capability of lasers with separate confinement heterostructure depends strongly on carrier transport and gain saturation phenomena. Nonlinear gain saturation model in connection with dynamic behavior at high-frequency modulation is discussed and peculiarities of application of a new dynamic model with partial differential equation for the carrier transport in SCH region are shown.
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Sukhoivanov, I.A. Influence of gain saturation and carrier dynamic models on the modulation response of quantum well lasers. Optical and Quantum Electronics 31, 997–1007 (1999). https://doi.org/10.1023/A:1006911127744
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DOI: https://doi.org/10.1023/A:1006911127744