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Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Center For Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260

    C. L. Cha

  2. Center For Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260

    E. F. Chor & H. Gong

  3. Research and Development Department, Chartered Semiconductor Manufacturing Ltd., No. 60 Woodlands Industrial Park D, Street 2, Singapore, 738406

    L. Chan

Authors
  1. C. L. Cha
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  2. E. F. Chor
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  3. H. Gong
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  4. L. Chan
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Cha, C.L., Chor, E.F., Gong, H. et al. Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown. Journal of Materials Science Letters 19, 817–821 (2000). https://doi.org/10.1023/A:1006745528344

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  • DOI: https://doi.org/10.1023/A:1006745528344

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